Ivan Kozhedub Kharkiv National Air Force University (KNAFU)

Annotation: The methodology of analysis of thermal degradations in semiconductor devices due to various form of electromagnetic radiation is presented. The proposed methodology is based on volumetric thermal model. The dependence of the normalized temperature for the investigated pulse is constructed.

Keywords: semiconductor device, pulsed electric overload, effect of degradation

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Information about the authors of publication:

• Kucher D. B.
• Taranenko S. V.
• Litvinenko L. V.
• Zontova T. V.

Reference:
Kucher, D.B., Taranenko, S.V., Litvinenko, L.V. and Zontova, T.V. (2013), The modelling of thermal damages in semiconductor devices due to various form of pulsed electromagnetic radiation, Information Processing Systems, Vol. 7(114), pp. 40-43.