The modelling of thermal damages in semiconductor devices due to various form of pulsed electromagnetic radiation
D.
B.
Kucher
,
S.
V.
Taranenko
,
L.
V.
Litvinenko
,
T.
V.
Zontova
Системи обробки інформації.
— 2013. — № 7(114). — С. 40-43.
Тематика статті: Радіоелектронні системи
УДК 621.396.6
Мова статті:
англійська
Анотації на мовах:
The methodology of analysis of thermal degradations in semiconductor devices due to various form of electromagnetic radiation is presented. The proposed methodology is based on volumetric thermal model. The dependence of the normalized temperature for the investigated pulse is constructed.
Ключові слова: semiconductor device, pulsed electric overload, effect of degradation
Інформація про авторів публікації:
Reference:
Kucher, D. B., Taranenko, S. V., Litvinenko, L. V. and Zontova, T. V. (2013), The modelling of thermal damages in semiconductor devices due to various form of pulsed electromagnetic radiation, Information Processing Systems, No. 7(114), pp. 40-43
Kucher, D. B., Taranenko, S. V., Litvinenko, L. V. and Zontova, T. V. (2013), The modelling of thermal damages in semiconductor devices due to various form of pulsed electromagnetic radiation, Information Processing Systems, No. 7(114), pp. 40-43