Increase of efficiency management complex coefficient of reflection of multi-layered structure, containing semiconductor, in millimetric range of wave-lengths
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Description: The analysis of complex coefficient of reflection of multi-layered structure, containing a semiconductor layer is conducted, in the millimetric range of wave-lengths. Requirements are formulated to the basic parameters of multi-layered structures, to providing the increase of efficiency of management their reflecting descriptions.
Keywords:
complex coefficient of reflection, multi-layered structure, semiconductor
Reference:
Karpenko, V.I. and Moiseeva, G.A. (2008), “Povyshenie effektivnosti upravleniia kompleksnym koeffitsientom otrazheniia mnogosloinoi struktury, soderzhashchei poluprovodnik, v millimetrovom diapazone dlin voln”, Information Processing Systems, Vol. 2(69), pp. 63-64.
Karpenko, V.I. and Moiseeva, G.A. (2008), “Povyshenie effektivnosti upravleniia kompleksnym koeffitsientom otrazheniia mnogosloinoi struktury, soderzhashchei poluprovodnik, v millimetrovom diapazone dlin voln”, Information Processing Systems, Vol. 2(69), pp. 63-64.