Impact of powerful electromagnetic radiation on radioelectronic means

A. M. Sotnikov , M. M. Yasechko , V. A. Tarshyn
УДК 396.15(5); 396.18(1)
Мова статті: англійська
Анотації на мовах:

The article analyzes the ways and mechanisms of the effect of powerful electromagnetic radiation on radio electronic means and their element base. It is determined that the effect of high-power electromagnetic radiation of ultrashort duration, due to high penetrating power and threshold levels of failures and damage, is the most dangerous factor in relation to various types of electronic devices, as well as their components, primarily semiconductor devices and microelectronic elements. Analysis of available domestic and foreign literature has shown that there is no research into the ways and mechanisms of the electromagnetic radiation effect on radio electronic means. Differences between the electromagnetic radiation of the ultrashort range are revealed in terms of the impact on the radio electronic equipment. Significant influence on the efficiency of the radio electronic elements of means can be caused by microwave impulses on cable lines, antenna-feeder devices and interblock connections. In addition, induced voltages can change the operating modes of the nodes, which will lead to a temporary or catastrophic failure in general. It is pointed out that it is necessary to search for new technologies in solving the problem of their protection, while simultaneously preventing the effects of electromagnetic radiation of ultrashort duration on radio electronic means on all possible channels of passage.
Ключові слова: the electromagnetic radiation of the ultrashort range, the radio electronic equipment, highfrequency radiation
Інформація про авторів публікації:
Reference:
Sotnikov, A. M., Yasechko, M. M. and Tarshyn, V. A. (2017), Impact of powerful electromagnetic radiation on radioelectronic means, Science and Technology of the Air Force of Ukraine, No. 3(28), pp. 86-91 https://doi.org/10.30748/nitps.2017.28.11