Within the framework of quantum mechanical area electronic structure of semiconductors the possibility of determination of power diagram parameters of donor-type semiconductor cathode is considered. It is shown that the introduction of experimental cathode temperature depentanizer of satiation current density of electronic emission js (T) in the mathematical simulation allows to define such parameters as: external work function of electron c, electrons concentration at donor-type level Nd and energy of donor-type level bedding in the restricted area of semiconductor Ed. For the estimation of electron effective mass value in the conductivity area based on the offered method, data handling of temperature dependence of emission current density of cathode foundation on BaO was carry out.
cathode, barium skandat, current density, thermal emission, external work function of electron, semiconductor, zonal theory, donor-type level
"Opredelenye parametrov zonnoi эnerhetycheskoi strukturы эlektronov v poluprovodnykovыkh katodakh donornoho typa" ,
Scientific Works of Kharkiv National Air Force University,